GALLIUM NITRIDE AND SILICON CARBIDE POWER DEVICES

Book ID/图书代码： 14600017B99150

English Summary/英文概要： During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.

This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

Chinese Summary/中文概要： *随着信息技术不断迅猛的发展，摩尔定律在指导芯片产业发展规律超过半个世纪后，面临着即将失效的大限。寻找半导体硅材料替代品的任务变得非常紧迫，而氮化镓和碳化硅就是在寻找过程中涌现出的两大新型材料，被并称为第三代半导体材料的双雄；*在过去的三十多年中，有关氮化镓和碳化硅材料的结构、实验结果及对于电子系统性能的提升方面的研究取得了长足的进步，并且近年来，多家公司已经推出了相关的基于氮化镓和碳化硅材料的功率器件的实物产品；*适合读者广泛，电子电气工程、半导体、材料工程及能源工程等各方面的学生、学者、研究人员乃至从业人员均可使用本书作为参考工具书。

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